Oxide and Hydroxide Activity Determination in Oxide Doped Lithium Fluoride II. Total Oxygen Content Determination
نویسنده
چکیده
where d = thickness of the film, ,o = resistivity of the film, = resistivity of the bulk material having the same structure and approximately the same number of defects as the films, l0 = mean free path of the charge carriers. The values of l0 calculated by the two methods were found to agree satisfactorily. Figs. 7 and 8 show the variation of the Hall mobility (/̂ H) with film thickness and substrate tem-
منابع مشابه
Work function tuning of tin-doped indium oxide electrodes with solution-processed lithium fluoride
Available online 19 November 2013
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