Oxide and Hydroxide Activity Determination in Oxide Doped Lithium Fluoride II. Total Oxygen Content Determination

نویسنده

  • A. A. SMALES
چکیده

where d = thickness of the film, ,o = resistivity of the film, = resistivity of the bulk material having the same structure and approximately the same number of defects as the films, l0 = mean free path of the charge carriers. The values of l0 calculated by the two methods were found to agree satisfactorily. Figs. 7 and 8 show the variation of the Hall mobility (/̂ H) with film thickness and substrate tem-

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تاریخ انتشار 2012